TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 4 Pin |
Case/Package | PDIP-4 |
Number of Channels | 1 Channel |
Forward Voltage | 1.2 V |
Rise Time | 100 µs |
Isolation Voltage | 5000 Vrms |
Maximum Forward Voltage (Max) | 1.4 V |
Forward Current (Max) | 50 mA |
Fall Time | 20 µs |
Fall Time (Max) | 100 µs |
Fall Time (Max) | 300 µs |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -30 ℃ |
Power Dissipation (Max) | 150 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Box |
The FOD852 consists of gallium arsenide infrared emitting diode driving a silicon photodarlington output (with integral base-emitter resistor) in a 4-pin dual in-line package.
●Features
●---
● |
● High Current Transfer Ratio: 1000% Minimum
● Safety and Regulatory Approvals
● UL1577, 5,000 VACRMS for 1 Minute
● DIN EN/IEC60747-5-5
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