TYPE | DESCRIPTION |
---|
Case/Package | Module |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Capacitance (Cies) | 600pF @25V |
Input Power (Max) | 20 mW |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Operating Temperature | -40℃ ~ 150℃ |
FP10R12W1T4P, SP001585450
Infineon
5 Pages / 0.2 MByte
Infineon
Trans IGBT Module N-CH 1200V 20A 105000mW 23Pin EASY1B Tray
Infineon
EasyPIM™ 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology.
Infineon
Trans IGBT Module N-CH 1200V 20A 105000mW 23Pin EASY1B-2 Tray
Infineon
Trans IGBT Module N-CH 1.2kV 20A 20Pin EASY1B
Infineon
MOD IGBT LOW PWR EASY1B-2
Infineon
Trans IGBT Module N-CH 1200V 20A 105000mW 20Pin EASY1B-1 Tray
Infineon
EasyPIM™ 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Infineon
EasyPIM 1B 1200V 3-phase rectifier IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC (...
Infineon
EasyPIM™ 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Infineon
EasyPIM™ 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.