| TYPE | DESCRIPTION |
|---|
| Case/Package | AG-ECONO3-5 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Summary of Features:
● Low Switching Losses
● Low V CEsat
● T vj op = 150°C
● V CEsat with positive Temperature Coefficient
● High Power and Thermal Cycling Capability
● Integrated NTC temperature sensor
● Copper Base Plate
● Standard Housing
●Benefits:
● Compact module concept
● Optimized customer’s development cycle time and cost
● Configuration flexibility
Infineon
12 Pages / 0.73 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
Trans IGBT Module N-CH 1200V 150A Tray
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC.
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology.
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology.
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