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FP75R07N2E4B11BOSA1
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FP75R07N2E4B11BOSA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:AG-ECONO2-4
Description:Trans IGBT Module N-CH 650V 75A 250000mW Tray
Documentation:FP75R07N2E4B11BOSA1 Datasheet (1 Pages)FP75R07N2E4B11BOSA1 User Reference Manual Guide (36 Pages)FP75R07N2E4B11BOSA1 Application Note (33 Pages)
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FP75R07N2E4B11BOSA1 Datasheet PDF (1 Pages)
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FP75R07N2E4B11BOSA1 Specifications

TYPEDESCRIPTION
Number of Pins31 Pin
Case/PackageAG-ECONO2-4
Power Dissipation250000 mW
Breakdown Voltage (Collector to Emitter)650 V
Input Capacitance (Cies)4.6nF @25V
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)250000 mW
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FP75R07N2E4B11BOSA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTray
Size-Length107.5 mm
Size-Width45 mm
Size-Height17 mm
Operating Temperature-40℃ ~ 150℃
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FP75R07N2E4B11BOSA1 Documents

FP75R07N2E4B11BOSA1 Datasheet
Infineon
1 Pages / 0.03 MByte
FP75R07N2E4B11BOSA1 User Reference Manual Guide
Infineon
36 Pages / 3.45 MByte
FP75R07N2E4B11BOSA1 Other Datasheet PDF
Infineon
1 Pages / 0.03 MByte
FP75R07N2E4B11BOSA1 Application Note
Infineon
33 Pages / 2.24 MByte

FP75R07N2E4B11 Documents

FP75R07N2E4_B11 Datasheet PDF
Infineon
Trans IGBT Module N-CH 650V 75A 31Pin ECONO2-4
FP75R07N2E4B11BOSA1 Datasheet PDF
Infineon
Trans IGBT Module N-CH 650V 75A 250000mW Tray
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