TYPE | DESCRIPTION |
---|
Mounting Style | Screw |
Number of Pins | 35 Pin |
Case/Package | AG-ECONO3-3 |
Polarity | N-Channel |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Capacitance (Cies) | 4.3nF @25V |
Input Power (Max) | 385 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Size-Length | 122 mm |
Size-Width | 62 mm |
Size-Height | 17 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
● Low Switching Losses
● Low V(CEsat)
● T(vj op) = 150°C
● V (CEsat) with positive Temperature Coefficient
● High Power and Thermal Cycling Capability
● Integrated NTC temperature sensor
● Copper Base Plate
● Standard Housing
Infineon
12 Pages / 0.84 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
Trans IGBT Module N-CH 1200V 75A 385000mW 35Pin ECONO 3 Tray
Infineon
Trans IGBT Module N-CH 1200V 75A 385000mW 35Pin Tray
Infineon
Trans IGBT Module N-CH 1.2kV 75A 35Pin ECONO 3
Infineon
Trans IGBT Module N-CH 1200V 75A 385000mW 35Pin ECONO3-3 Tray
Infineon
Trans IGBT Module N-CH 1.2kV 75A 34Pin ECONO3-3
Infineon
Trans IGBT Module N-CH 1200V 75A 385000mW 35Pin Tray
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material
Infineon
EconoPIM™ 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.