| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | HF2CA-N32 |
| Power Dissipation | 156000 mW |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Input Power (Max) | 156 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 156000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
ON Semiconductor
22 Pages / 2.67 MByte
ON Semiconductor
2 Pages / 0.12 MByte
ON Semiconductor
Trans IGBT Module N-CH 650V 40A 156000mW 17Pin Case F2 Tray
ON Semiconductor
Trans IGBT Module N-CH 650V 40A 156000mW Tray
Fairchild
Trans IGBT Module N-CH 650V 40A 17Pin Case F2
Fairchild
Trans IGBT Module N-CH 650V 40A 17Pin Case F2
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