| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 600 V |
| Current Rating | 10.0 A |
| Case/Package | TO-3-3 |
| Drain to Source Resistance (on) (Rds) | 730 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 192 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 69 ns |
| Input Capacitance (Ciss) | 2040pF @25V(Vds) |
| Input Power (Max) | 192 W |
| Fall Time | 77 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 192W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 16.2 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
●Features
●• 10A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
●• Low gate charge ( typical 44 nC)
●• Low Crss ( typical 18 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
Fairchild
8 Pages / 0.65 MByte
Fairchild
8 Pages / 0.61 MByte
Fairchild
MOSFET N-CH 600V 10A TO-3P
ON Semiconductor
MOSFET N-CH 600V 10A TO-3P
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