| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.93 Ω |
| Polarity | N-Channel |
| Power Dissipation | 240 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 10A |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 2800pF @25V(Vds) |
| Input Power (Max) | 240 W |
| Fall Time | 80 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 240W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQA10N80C_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (44nC)
● Low Crss (15pF)
● 100% avalanche tested
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