| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.91 Ω |
| Power Dissipation | 300 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2530 pF |
| Drain to Source Voltage (Vds) | 900 V |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 2530pF @25V(Vds) |
| Fall Time | 85 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
The FQA11N90C_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (60nC)
● Low Crss (23pF)
● 100% avalanche tested
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