TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-3-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.008 Ω |
Power Dissipation | 375 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 100 V |
Rise Time | 940 ns |
Input Capacitance (Ciss) | 6100pF @25V(Vds) |
Input Power (Max) | 375 W |
Fall Time | 360 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 375000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.8 mm |
Size-Width | 5 mm |
Size-Height | 18.9 mm |
The FQA140N10 is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● 220nC Typical low gate charge
● 470pF Typical low Crss
● 100% Avalanche tested
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13 Pages / 0.57 MByte
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