| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Power Dissipation | 310 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 250 V |
| Rise Time | 700 ns |
| Input Capacitance (Ciss) | 4800pF @25V(Vds) |
| Input Power (Max) | 310 W |
| Fall Time | 250 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 310 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
The FQA55N25 is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 100% Avalanche tested
● 140nC Typical low gate charge
● 125pF Typical low Crss
ON Semiconductor
8 Pages / 2.22 MByte
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ON Semiconductor
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