| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 900 V |
| Current Rating | 9.00 A |
| Case/Package | TO-3-3 |
| Drain to Source Resistance (on) (Rds) | 1.40 Ω |
| Polarity | N-Channel |
| Power Dissipation | 280W (Tc) |
| Drain to Source Voltage (Vds) | 900 V |
| Breakdown Voltage (Drain to Source) | 900 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Input Capacitance (Ciss) | 2730pF @25V(Vds) |
| Power Dissipation (Max) | 280W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
●Features
●• 9A, 900V, RDS(on)= 1.4Ω@VGS= 10 V
●• Low gate charge ( typical 45 nC)
●• Low Crss ( typical 14pF)
●•Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
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