| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 96 mΩ |
| Power Dissipation | 3.75 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 170 ns |
| Input Capacitance (Ciss) | 1170pF @25V(Vds) |
| Input Power (Max) | 3.75 W |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3750 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
The FQB22P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● 100% Avalanche tested
● 40nC Typical low gate charge
● 160pF Typical low Crss
ON Semiconductor
8 Pages / 2.17 MByte
ON Semiconductor
9 Pages / 0.93 MByte
ON Semiconductor
7 Pages / 0.87 MByte
Fairchild
Trans MOSFET P-CH 100V 22A 3Pin(2+Tab) D2PAK
ON Semiconductor
Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Fairchild
MOSFET Transistor, P Channel, 22A, 100V, 96mohm, 10V, -4V
ON Semiconductor
MOSFET P-CH 100V 22A D2PAK
Fairchild
Trans MOSFET P-CH 100V 22A Automotive 3Pin(2+Tab) D2PAK T/R
ON Semiconductor
Trans MOSFET P-CH 100V 22A Automotive 3-Pin(2+Tab) D2PAK T/R
Fairchild
Fqb22p10 / Fqi22p10 100V P-channel Mosfet
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
