| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.055 Ω |
| Power Dissipation | 3.75 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1100 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 185 ns |
| Input Capacitance (Ciss) | 1100pF @25V(Vds) |
| Input Power (Max) | 3.75 W |
| Fall Time | 90 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3750 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
The FQB27P06TM is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
● Low gate charge
● 100% Avalanche tested
● 175°C Rated junction temperature
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FAIRCHILD SEMICONDUCTOR FQB27P06TM MOSFET Transistor, P Channel, 27A, -60V, 0.055Ω, -10V, -4V
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