| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Power Dissipation | 3.75 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 195 ns |
| Input Capacitance (Ciss) | 1150pF @25V(Vds) |
| Input Power (Max) | 3.75 W |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.75 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
The FQB33N10TM is a 100V N-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
● Low gate charge (typical 38nC)
● Low Crss (typical 62pF)
● 100% Avalanche tested
● ±25V Gate source voltage
● 40°C/W Thermal resistance, junction to ambient
● 1.18°C/W Thermal resistance, junction to case
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