| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.049 Ω |
| Power Dissipation | 3.75 W |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 250 ns |
| Input Capacitance (Ciss) | 2240pF @25V(Vds) |
| Input Power (Max) | 3.75 W |
| Fall Time | 210 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3750 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The FQB34P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● 100% Avalanche tested
● 85nC Typical low gate charge
● 170pF Typical low Crss
ON Semiconductor
8 Pages / 1.36 MByte
ON Semiconductor
10 Pages / 1.93 MByte
ON Semiconductor
4 Pages / 0.6 MByte
ON Semiconductor
Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Fairchild
FAIRCHILD SEMICONDUCTOR FQB34P10TM MOSFET Transistor, P Channel, -33.5A, -100V, 0.049Ω, -10V, -4V
ON Semiconductor
MOSFET P-CH 100V 33.5A D2PAK
Fairchild
Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
ON Semiconductor
-100V, -33.5A, 60mΩ, D2PAK
ON Semiconductor
-100V, -33.5A, 60mΩ, D2PAK
ON Semiconductor
-100V, -33.5A, 60mΩ, D2PAK
Fairchild
-33.5A ， -100V ， RDS （ ON） = 0.06Î © @VGS = -10V -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10V
ON Semiconductor
-100V, -33.5A, 60mΩ, D2PAK
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