| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.026 Ω |
| Power Dissipation | 160 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2800 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 450 ns |
| Input Capacitance (Ciss) | 2800pF @25V(Vds) |
| Fall Time | 195 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.75 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
The FQB47P06TM_AM002 is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● 100% Avalanche tested
● 84nC Typical low gate charge
● 320pF Typical low Crss
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