| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.14 Ω |
| Power Dissipation | 73 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Rise Time | 46 ns |
| Input Capacitance (Ciss) | 480pF @25V(Vds) |
| Input Power (Max) | 73 W |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 73 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
The FQB5N50CTM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 100% Avalanche tested
● 18nC Typical low gate charge
● 15pF Typical low Crss
ON Semiconductor
8 Pages / 0.46 MByte
ON Semiconductor
18 Pages / 0.94 MByte
ON Semiconductor
7 Pages / 0.87 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FQB5N50CTM MOSFET Transistor, N Channel, 5A, 500V, 1.14Ω, 10V, 4V
ON Semiconductor
Trans MOSFET N-CH 500V 5A 3Pin(2+Tab) D2PAK T/R
Fairchild
Trans MOSFET N-CH 500V 4.5A 3Pin(2+Tab) D2PAK T/R
Fairchild
MOSFET N-CH 500V 5A D2PAK
ON Semiconductor
MOSFET N-CH 500V 5A D2PAK
ON Semiconductor
MOSFET N-CH 500V 4.5A D2PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
