| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | DPAK |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 80 V |
| Continuous Drain Current (Ids) | 12.9A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
●Features
●• 12.9A, 80V, RDS(on)= 0.115Ω @VGS= 10 V
●• Low gate charge ( typical 12 nC)
●• Low Crss ( typical 28 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
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