General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
●performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
●Features
●• 24A, 60V, RDS(on)= 0.039Ω@ VGS= 10V
●• Low gate charge ( typical 15 nC)
●• Low Crss ( typical 50 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
●• 150oC maximum junction temperature rating
●• Low level gate drive requirements allowing direct
●operation form logic drivers
●• RoHS Compliant
