TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | DPAK |
Polarity | N-CH |
Drain to Source Voltage (Vds) | 200 V |
Continuous Drain Current (Ids) | 3.8A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
●Features
●• 3.8A, 200V, RDS(on)= 1.2Ω@VGS= 10 V
●• Low gate charge ( typical 4.8 nC)
●• Low Crss ( typical 6.0 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
●• Low level gate drive requirement allowing direct operation from logic drivers
●• RoHS Compliant
Fairchild
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