TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 7.00 A |
Case/Package | TO-252-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 400 mΩ |
Polarity | N-CH |
Power Dissipation | 2.5 W |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Continuous Drain Current (Ids) | 7.00 A |
Rise Time | 75 ns |
Input Capacitance (Ciss) | 550pF @25V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 64 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 2.5W (Ta), 46W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild"s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.
●Product Highlights
●7A, 200V, R
●DS(on)
●= 0.4
●W
●@V
●GS
●= 10 V
●Low gate charge ( typical 19 nC)
●Low Crss ( typical 35 pF)
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
Fairchild
2 Pages / 0.22 MByte
Fairchild
2 Pages / 0.39 MByte
Fairchild
200V LOGIC N-Channel MOSFET
Fairchild
Trans MOSFET N-CH 200V 7A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 200V 7A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
Trans MOSFET N-CH 200V 7A 3Pin(2+Tab) DPAK T/R
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