TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 19.4 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.12 Ω |
Polarity | N-Channel |
Power Dissipation | 140 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 19.4 A |
Input Capacitance (Ciss) | 1600pF @25V(Vds) |
Input Power (Max) | 140 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 10.2 mm |
Size-Width | 4.7 mm |
Size-Height | 15.38 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies and active power factor correction (PFC).
● 100% Avalanche tested
● 31nC Typical low gate charge
● 30pF Typical low Crss
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