TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 19.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 140 mΩ |
Polarity | N-Channel |
Power Dissipation | 139 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 19.0 A |
Rise Time | 150 ns |
Input Capacitance (Ciss) | 1080pF @25V(Vds) |
Input Power (Max) | 139 W |
Fall Time | 115 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 139 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.1 mm |
Size-Width | 4.7 mm |
Size-Height | 9.4 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQP19N20C is a 200V N-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (typical 40.5nC)
● Low Crss (typical 85pF)
● 100% Avalanche tested
● ±30V Gate to source voltage
● 62.5°C/W Thermal resistance, junction to ambient
● 0.9°C/W Thermal resistance, junction to case
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