| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 140 mΩ |
| Power Dissipation | 139 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 150 ns |
| Input Capacitance (Ciss) | 830pF @25V(Vds) |
| Input Power (Max) | 139 W |
| Fall Time | 115 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 139 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.1 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
The FQP19N20C is a 200V N-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (typical 40.5nC)
● Low Crss (typical 85pF)
● 100% Avalanche tested
● ±30V Gate to source voltage
● 62.5°C/W Thermal resistance, junction to ambient
● 0.9°C/W Thermal resistance, junction to case
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