TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.031 Ω |
Power Dissipation | 79 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 60 V |
Rise Time | 85 ns |
Input Capacitance (Ciss) | 725pF @25V(Vds) |
Input Power (Max) | 79 W |
Fall Time | 40 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 79 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.1 mm |
Size-Width | 4.7 mm |
Size-Height | 9.4 mm |
Operating Temperature | -55℃ ~ 175℃ |
The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
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