| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Power Dissipation | 180 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 3100 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 570 ns |
| Input Capacitance (Ciss) | 2400pF @25V(Vds) |
| Input Power (Max) | 180 W |
| Fall Time | 240 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 18 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.1 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
The FQP34N20 is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 100% Avalanche tested
● 60nC Typical low gate charge
● 55pF Typical low Crss
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