| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.021 Ω |
| Power Dissipation | 160 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3600 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 910 ns |
| Input Capacitance (Ciss) | 2800pF @25V(Vds) |
| Input Power (Max) | 160 W |
| Fall Time | 400 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.1 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
The FQP47P06 is a -60V P-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
● Low gate charge (typical 84nC)
● Low Crss (typical 320pF)
● 100% Avalanche tested
● ±25V Gate to source voltage
● 62.5°C/W Thermal resistance, junction to ambient
● 0.94°C/W Thermal resistance, junction to case
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