| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 55.0 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 26.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 155 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±25.0 V |
| Continuous Drain Current (Ids) | 55.0 A |
| Rise Time | 250 ns |
| Input Capacitance (Ciss) | 2730pF @25V(Vds) |
| Input Power (Max) | 155 W |
| Fall Time | 140 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 155 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.1 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control
●Features
●• 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V
●• Low gate charge ( typical 75 nC)
●• Low Crss ( typical 130 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
●• 175°C maximum junction temperature rating
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