| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 9.00 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 800 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 135 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Rise Time | 65 ns |
| Input Capacitance (Ciss) | 1030pF @25V(Vds) |
| Input Power (Max) | 135 W |
| Fall Time | 64 ns |
| Power Dissipation (Max) | 135W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
●Features
●• 9 A, 500V, RDS(on)= 0.8 Ω@VGS= 10 V
●• Low gate charge ( typical 28 nC)
●• Low Crss ( typical 24 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
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Trans MOSFET N-CH 500V 9A 3Pin(3+Tab) TO-220AB Rail
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