| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 53 W |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 115 ns |
| Input Capacitance (Ciss) | 700pF @25V(Vds) |
| Input Power (Max) | 53 W |
| Fall Time | 80 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 53 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.16 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.19 mm |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
●Features
●---
● |
● "
● 11.6A, 150V, RDS(on) = 160mΩ(Max.) @VGS = 10 V, ID = 5.8A
● Low gate charge ( Typ. 23nC)
● Low Crss ( Typ. 30pF)
● 100% avalanche tested
● 175°C maximum junction temperature rating"
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