| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 15.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 30 W |
| Drain to Source Resistance (on) (Rds) | 60.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 30 W |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±25.0 V |
| Continuous Drain Current (Ids) | 15.0 A |
| Rise Time | 45 ns |
| Input Capacitance (Ciss) | 590pF @25V(Vds) |
| Input Power (Max) | 30 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 30W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.9 mm |
| Size-Height | 16.07 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
●Product Highlights
●15A, 60V, R
●DS(on)
●= 0.06
●W
●@V
●GS
●= 10 V
●Low gate charge ( typical 11.5 nC)
●Low Crss ( typical 25 pF)
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
●175°C maximum junction temperature rating
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