| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 47 W |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 4A |
| Input Capacitance (Ciss) | 960pF @25V(Vds) |
| Power Dissipation (Max) | 47W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
●Features
●• 4A, 900V, RDS(on) = 4.2Ω @VGS = 10 V
●• Low gate charge ( typical 17nC)
●• Low Crss ( typical 5.6 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
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