| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 1.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 68 W |
| Drain to Source Voltage (Vds) | 900 V |
| Breakdown Voltage (Drain to Source) | 900 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 2730pF @25V(Vds) |
| Input Power (Max) | 68 W |
| Fall Time | 75 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 68W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.9 mm |
| Size-Height | 16.07 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
●Features
●• 8 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A
●• Low Gate Charge (Typ. 45 nC)
●• Low Crss (Typ. 14 pF)
●• 100% Avalanche Tested
Fairchild
10 Pages / 1.04 MByte
Fairchild
10 Pages / 0.82 MByte
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