| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-223 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 0.2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
Description
●This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®
●’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
●Features
●• 0.2 A, 600 V, RDS(on)=9.3 Ω(7S.)@VGS=10 V, ID=0.1 A
●• Low Gate Charge (Typ. nC)
●• Low Crss(Typ. pF)
●• 100% Avalanche Tested
●• RoHS Compliant
Fairchild
8 Pages / 1.08 MByte
Fairchild
8 Pages / 0.8 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FQT1N60CTF_WS Power MOSFET, N Channel, 200mA, 600V, 9.3Ω, 10V, 4V
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Fairchild
N-Channel QFET MOSFET 600V, 0.2A, 11.5Ω
Fairchild
N-Channel QFET MOSFET 600V, 0.2A, 11.5Ω
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