| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-223 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 0.85A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
Description
●This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
●Features
●• 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ.)@VGS=10 V, ID=0.425 A
●• Low Gate Charge (Typ. 4 nC)
●• Low Crss (Typ. 6 pF)
●• 100% Avalanche Tested
●• Low Level Gate Drive Requirments Allowing Direct Operation From Logic Drives
Fairchild
8 Pages / 0.73 MByte
ON Semiconductor
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Trans MOSFET N-CH 200V 0.85A 4Pin(3+Tab) SOT-223 T/R
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Trans MOSFET N-CH 200V 0.85A 4Pin(3+Tab) SOT-223 T/R
Fairchild
Trans MOSFET N-CH 200V 0.85A 4Pin(3+Tab) SOT-223 T/R
Fairchild
N-Channel QFET® MOSFET (200V, 0.85A, 1.4Ω)
ON Semiconductor
MOSFET N-CH 200V 0.85A SOT-223
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