| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.38 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 250 V |
| Rise Time | 45 ns |
| Input Capacitance (Ciss) | 155pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
The FQT4N25TF is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 4.3nC Typical low gate charge
● 4.8pF Typical low Crss
ON Semiconductor
8 Pages / 0.57 MByte
ON Semiconductor
9 Pages / 0.74 MByte
ON Semiconductor
Power MOSFET, N-Channel, QFET®, 250 V, 0.83 A, 1.75 Ω, SOT-223, 4000-REEL
Fairchild
Trans MOSFET N-CH 250V 0.83A 4Pin(3+Tab) SOT-223 T/R
ON Semiconductor
Trans MOSFET N-CH 250V 0.83A 4Pin(3+Tab) SOT-223 T/R
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