| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -1.00 A |
| Case/Package | SOT-223-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 820 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Input Capacitance | 250 pF |
| Gate Charge | 8.20 nC |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | -1.00 A, 1.00 mA |
| Rise Time | 70 ns |
| Input Capacitance (Ciss) | 250pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.56 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
● Low gate charge (typical 6.3nC)
● Low Crss (typical 18pF)
● 100% Avalanche tested
● ±30V Gate to source voltage
● 62.5°C/W Thermal resistance, junction to ambient
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