| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 11.0 A |
| Case/Package | TO-251-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.092 Ω |
| Polarity | N-Channel |
| Power Dissipation | 28 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.3 mm |
| Size-Height | 6.1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FQU13N06LTU is a QFET® enhancement-mode N-channel Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● Low level gate drive requirements allowing direct operation form logic drivers
● 100% Avalanche tested
● 4.8nC Typical low gate charge
● 17pF Typical low Crss
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