| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Supply Voltage (DC) | 37.0V (max) |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -12.0 A |
| Case/Package | TO-251-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 135 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 44 W |
| Input Capacitance | 690 pF |
| Gate Charge | 21.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±25.0 V |
| Continuous Drain Current (Ids) | -12.0 A |
| Rise Time | 100 ns |
| Input Capacitance (Ciss) | 900pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.8 mm |
| Size-Width | 2.5 mm |
| Size-Height | 6.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
● Low gate charge
● 100% Avalanche tested
● Low crss (typical 80pF)
● ±25V Gate-source voltage
Fairchild
9 Pages / 1.4 MByte
Fairchild
11 Pages / 1.55 MByte
Fairchild
1 Pages / 0.14 MByte
ON Semiconductor
Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK, 5040-TUBE
Fairchild
Trans MOSFET P-CH 60V 12A 3Pin(3+Tab) IPAK Tube
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