| TYPE | DESCRIPTION |
|---|
| Number of Pins | 35 Pin |
| Case/Package | AG-EASY2B-1 |
| Power Dissipation | 375000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 4.3nF @25V |
| Input Power (Max) | 375 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 375000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● Low Switching Losses
● Trench IGBT 4
● V(CEsat) with positive Temperature Coefficient
● Low V(CEsat)
● Al(2)O(3) Substrate with Low Thermal Restistance
● Compact Design
● Solder Contact Technology
● Rugged mounting due to integrated mounting clamps
●Benefits:
● Compact module concept
● Optimized customer’s development cycle time and cost
● Configuration flexibility
Infineon
9 Pages / 0.97 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
Trans IGBT Module N-CH 1200V 107A 375000mW 35Pin Tray
Infineon
Trans IGBT Module N-CH 1200V 107A 375000mW 18Pin Tray
Infineon
Trans IGBT Module N-CH 1.2kV 107A 18Pin EASY2B-2
Infineon
Trans IGBT Module N-CH 1200V 107A 375000mW 35Pin EASY2B-1 Tray
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
