FZ1000R33HE3BOSA1 Datasheet PDF - Infineon

Manufacturer:	Infineon
Description:	MODULE DIODE IHVB130-3
Documentation:	FZ1000R33HE3BOSA1 Datasheet (9 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

FZ1000R33HE3BOSA1 Specifications

TYPE	DESCRIPTION
Breakdown Voltage (Collector to Emitter)	3300 V
Input Capacitance (Cies)	190nF @25V
Input Power (Max)	1600 W

Infineon

9 Pages / 0.49 MByte

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Trans IGBT Module N-CH 3.3kV 1000A 7Pin IHVB130-3

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3300V IHV B 130mm single switch IGBT Module with IGBT3 - The best solution for your traction and industry applications.

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SP001670368

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MODULE DIODE IHVB130-3

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