TYPE | DESCRIPTION |
---|
Number of Pins | 9 Pin |
Case/Package | AG-IHVB190-3 |
Power Dissipation | 17 kW |
Breakdown Voltage (Collector to Emitter) | 3300 V |
Input Capacitance (Cies) | 280nF @25V |
Input Power (Max) | 17000 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -50 ℃ |
Power Dissipation (Max) | 17000000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● High DC Stability
● High Short Circuit Capability
● Self Limiting short Circuit Current
● Low switching Losses
● Unbeatable Robustness
● T(vj op) = 150°C
● Low V(cesat) with positive Temperature coefficient
● AlSiC Base Plate for increased Thermal Cycling Capability
● Package with CTI > 600
● Isolated Base Plate
●Benefits:
● Standardized housing
Infineon
9 Pages / 0.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte
Infineon
1 Pages / 0.03 MByte
Infineon
Trans IGBT Module N-CH 3300V 1.5kA 14500000mW 9Pin IHVB190 Tray
Infineon
Trans IGBT Module N-CH 3300V 1.5kA 14500000mW 9Pin IHVB190 Tray
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