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FZ900R12KE4HOSA1
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FZ900R12KE4HOSA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Case Package:62MM-2
Description:Trans IGBT Module N-CH 1200V 900A 4300000mW 4Pin 62MM-2 Tray
Documentation:FZ900R12KE4HOSA1 User Reference Manual Guide (3 Pages)
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FZ900R12KE4HOSA1 Datasheet PDF (3 Pages)
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FZ900R12KE4HOSA1 Specifications

TYPEDESCRIPTION
Number of Pins4 Pin
Case/Package62MM-2
Power Dissipation4.3 kW
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)56nF @25V
Input Power (Max)4300 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)4300000 mW

FZ900R12KE4HOSA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTray
Operating Temperature-40℃ ~ 150℃ (TJ)

FZ900R12KE4HOSA1 Documents

FZ900R12KE4HOSA1 User Reference Manual Guide
Infineon
3 Pages / 0.36 MByte
FZ900R12KE4HOSA1 Other Datasheet PDF
Infineon
4 Pages / 0.23 MByte
FZ900R12KE4HOSA1 Notice File
Infineon
7 Pages / 0.25 MByte

FZ900R12KE4 Documents

FZ900R12KE4 Datasheet PDF
Infineon
Trans IGBT Module N-CH 1.2kV 900A 4Pin
FZ900R12KE4HOSA1 Datasheet PDF
Infineon
Trans IGBT Module N-CH 1200V 900A 4300000mW 4Pin 62MM-2 Tray
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