TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 120 V |
Current Rating | 2.00 A |
Case/Package | SOT-223 |
Polarity | NPN |
Power Dissipation | 2 W |
Breakdown Voltage (Collector to Emitter) | 120 V |
Continuous Collector Current | 1.5A |
hFE Min | 2000 @1A, 5V |
hFE Max | 2000 |
Input Power (Max) | 2 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Gain Bandwidth | 150MHz (Min) |
Power Dissipation (Max) | 3000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.65 mm |
Thanks to Diodes Zetex"s NPN FZT605TC Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.8@1mA@1A V. This product"s maximum continuous DC collector current is 1.5 A, while its minimum DC current gain is 2000@50mA@5 V|5000@500mA@5V|2000@1A@5V|500@2A@5V. It has a maximum collector emitter saturation voltage of 1.5@1mA@1A|1@0.25mA@250mA V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 10 V.
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