| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 175 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 2.00 A |
| Case/Package | TO-261-4 |
| Power Rating | 2 W |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 2A |
| hFE Min | 100 @500mA, 2V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Jump-start your electronic circuit design with this versatile NPN FZT653TA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
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