| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 140 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Polarity | PNP |
| Power Dissipation | 3 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 3A |
| hFE Min | 100 @500mA, 2V |
| Input Power (Max) | 3 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
60V PNP HIGH PERFORMANCE TRANSISTOR
●Features
●•BVCEO> -60V
●•IC= -3A high Continuous Current
●•ICM= -6A Peak Pulse Current
●• Low Saturation Voltage VCE(sat) < -300mV @ -1A
●• Complementary NPN Type: FZT651
●• Lead-Free Finish; RoHS compliant (Notes 1 & 2)
●• Halogen and Antimony Free. “Green” Device (Note 3)
●• Qualified to AEC-Q101 Standards for High Reliability
●• PPAP capable (Note 4)
●Applications
●•Automotive lighting
●• MOSFET and IGBT gate driving
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