TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Polarity | N-Channel |
Power Dissipation | 30.0 W |
Rise Time | 40.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
High Power Switching Applications
●Fast Switching Applications
●• Fourth-generation IGBT
●• Fast switching (FS
●• Enhancement mode type
●• High speed: tf = 0.03 μs (typ.)
●• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)
●• FRD included between emitter and collector
Toshiba
7 Pages / 0.22 MByte
Toshiba
7 Pages / 0.21 MByte
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