| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | DIP-6 |
| Input Voltage (DC) | 1.17 V |
| Output Voltage | 100 V |
| Number of Circuits | 1 Circuit |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Forward Voltage | 1.17 V |
| Input Current | 60 mA |
| Power Dissipation | 250 mW |
| Isolation Voltage | 7.5 kV |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Forward Current | 60 mA |
| Output Voltage (Max) | 30 V |
| Input Current (Min) | 60 mA |
| Maximum Forward Voltage (Max) | 1.5 V |
| Forward Current (Max) | 60 mA |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 8.89 mm |
| Size-Width | 6.6 mm |
| Size-Height | 5.08 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The H11AA1M is a H11AAXM series AC Input Phototransistor Output Optocoupler consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
● Bi-polar emitter input
● Built-in reverse polarity input protection
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