| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | DIP-6 |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Forward Voltage | 1.17 V |
| Input Current | 60 mA |
| Power Dissipation | 250 mW |
| Isolation Voltage | 4170 Vrms |
| Forward Current | 60 mA |
| Output Voltage (Max) | 30 V |
| Input Current (Min) | 60 mA |
| Maximum Forward Voltage (Max) | 1.5 V |
| Forward Current (Max) | 60 mA |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -40℃ ~ 100℃ |
The H11AAXM series consists of two gallium-arsenideinfrared emitting diodes connected in inverse paralleldriving a single silicon phototransistor output.
●Features
●---
● |
● Bi-polar emitter input
● Built-in reverse polarity input protection
● Underwriters Laboratory (UL) recognized File#E90700, Volume 2
● VDE approved File #102497 (ordering option ‘V’)
ON Semiconductor
13 Pages / 0.37 MByte
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50 Pages / 1.22 MByte
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2 Pages / 0.05 MByte
ON Semiconductor
9 Pages / 0.43 MByte
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